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| RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages. Formerly developmental type TA09534. Features * 8A, 200V * rDS(ON) = 0.600 * Design Optimized for 5V Gate Drives * Can be Driven Directly from QMOS, NMOS, TTL Circuits * Compatible with Automotive Drive Requirements * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedence Ordering Information PART NUMBER RFP8N20L PACKAGE TO-220AB BRAND RFP8N20L * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" NOTE: When ordering, include the entire part number. Symbol D G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 6-278 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 RFP8N20L Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP8N20L Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 200 200 8 20 10 60 0.48 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0 VGS = VDS, ID = 250A VDS = 0.8 x Rated BVDSS VDS = 0.8 x Rated BVDSS TC = 25oC TC = 125oC MIN 200 1 VGS = 0V, VDS = 25V, f = 1MHz RFP8N20L TYP 15 45 100 60 MAX 2 1 50 100 4.8 0.600 45 150 135 105 900 250 120 2.083 UNITS V V A A nA V ns ns ns ns pF pF pF oC/W Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn On Delay Time Rise Time Turn Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 10V, V = 0 DS ID = 8A, VGS = 5V ID = 4A, VGS = 5V ID = 4A, VDD = 50V, RG = 6.25 , V = 5V GS Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr ISD = 4A ISD = 4A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP 250 MAX 1.4 UNITS V ns 6-279 RFP8N20L Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) Unless Otherwise Specified 100 OPERATION IN THIS AREA LIMITED BY rDS(ON) 10 TC = 25oC TJ = MAX RATED 0.8 0.6 0.4 0.2 0 DC OPERATION 60W 1 0 50 100 150 0.1 TC, CASE TEMPERATURE (oC) 1 10 100 VDS, DRAIN TO SOURCE (V) 1000 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. FORWARD BIAS SAFE OPERATING AREA IDS(ON), DRAIN TO SOURCE CURRENT (A) 24 IDS, DRAIN TO SOURCE CURRENT (A) 20 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC 16 VDS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX -40oC 25oC 12 16 VGS = 10V 12 8 VGS = 3V 4 VGS = 2V 0 0 1 3 4 5 6 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 7 VGS = 5V VGS = 4V 8 125oC 4 125oC 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 -40oC FIGURE 3. SATURATION CHARACTERISTICS FIGURE 4. TRANSFER CHARACTERISTICS 1.2 rDS(ON), DRAIN TO SOURCE ON RESISTANCE() 1.0 0.8 NORMALIZED DRAIN TO SOURCE VDS = 5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. 2.0 ID = 4A, VGS = 5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX. 1.5 ON RESISTANCE 125oC 0.6 0.4 -40oC 0.2 0 25oC 1.0 0.5 0 5 10 ID, DRAIN CURRENT (A) 15 20 0 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) FIGURE 5. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT FIGURE 6. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 6-280 RFP8N20L Typical Performance Curves 1.3 1.2 NORMALIZED GATE THRESHOLD VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 0 50 100 TC, JUNCTION TEMPERATURE (oC) 150 VDS = VGS ID = 250A C, CAPACITANCE (pF) Unless Otherwise Specified (Continued) 800 700 600 500 400 300 200 COSS 100 0 0 CRSS 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD CISS FIGURE 7. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 200 VDS, DRAIN TO SOURCE VOLTAGE (V) BVDSS RL = 25 IG(REF) = 0.45mA VGS = 5V VDD = BVDSS 100 GATE SOURCE VOLTAGE 0.75 BVDSS 0.50 BVDSS 0.25 BVDSS FIGURE 8. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 10 VGS, GATE TO SOURCE VOLTAGE (V) 8 150 6 VDD = BVDSS 4 50 2 DRAIN SOURCE VOLTAGE 0 0 I 20 G(REF) IG(ACT) t, TIME (s) I 80 G(REF) IG(ACT) NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 9. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 10. SWITCHING TIME TEST CIRCUIT FIGURE 11. RESISTIVE SWITCHING WAVEFORMS 6-281 RFP8N20L Test Circuits and Waveforms (Continued) VDS RL VDD VDS VGS = 10V VGS + Qg(TOT) Qg(5) VDD VGS VGS = 1V 0 Qg(TH) IG(REF) 0 VGS = 5V DUT IG(REF) FIGURE 12. GATE CHARGE TEST CIRCUIT FIGURE 13. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 6-282 |
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